MF138800 - SEMI MF1388 - Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors Revision:SEMI MF1388-1106 - Superseded and 3 nm technology generation

and 3 nm technology generation (TG)

the other is quantitative

SEMI E92-0302E (editorial revision)

providing particle control as risk mitigation for particle contamination on the wafer

and gain a consistent understanding within

MF138800 - SEMI MF1388 - Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors Revision:SEMI MF1388-1106 - Superseded and 3 nm technology generationThis Test Method covers the measurement of generation lifetime and generation velocity of silicon wafers. The measurement requires the fabrication of a guard ring MOS capacitor (refer to Figure 1). This Test Method is therefore destructive to the silicon wafer. This test may also be applied to semiconductor materials other than silicon and to insulators other than silicon dioxide, but the details of capacitor fabrication and the analyses and